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《微尺度》(Small)杂志刊发“二维In2SnS4纳米片的协同辅助生长及栅压可调的偏振光探测”

发布时间:2021-06-14来源: 编辑:翟天佑

Nian Zuo, Anmin Nie, Chunguang Hu, Wanfu Shen, Bao Jin, Xiaozong Hu, Zhongyuan Liu, Xing Zhou*, Tianyou Zhai, Synergistic Additive-Assisted Growth of 2D Ternary In2SnS4 with Giant Gate-Tunable Polarization-Sensitive Photoresponse, Small 2021, 17, 2008078.

https://doi.org/10.1002/smll.202008078.

Abstract: Two-dimensional (2D) ternary materials exhibit great promising in the field of polarization-sensitive photodetectors due to the much low-symmetry crystal structure. However, the realization of ternary material growth is still a huge challenge because of the complex reaction process. Here, for the first time, 2D ternary In2SnS4 flakes are obtained via synergistic additive of salt and molecular sieve-assisted chemical vapor deposition. Raman vibration mode of In2SnS4 flakes exhibits polarization-dependent properties. The polarization-resolved absorption spectroscopy and azimuth-dependent reflectance difference microscopy further confirm its anisotropy of in-plane optical absorption and reflection. Besides, the In2SnS4 flake based device on mica shows ultrafast rising and decay rates of ~20 μs and 20 μs. Impressively, In2SnS4 flake based phototransistor demonstrates giant gate-tunable polarization-sensitive photoresponse: the dichroic ratio can be adjusted in the range of 1.13-1.70 with gate voltage varying from -35-35 V. This work provides an effective means for modulating the polarization-sensitive photoresponse, which may significantly promote the research progress of polarization-sensitive photodetectors.