祝贺周兴等人的文章被Adv. Funct. Mater.接收！
Large-Size Growth of Ultrathin SnS2 Nanosheets and High Performance for Phototransistor
X. Zhou, Q. Zhang, L. Gan, H. Q. Li, T. Y. Zhai*
Two-dimensional (2D) SnS2 nanosheets have been attracting intensive attention as one potential candidate for the modern electronic and/or optoelectronic fields. However, the controllable large-size growth of ultrathin SnS2 nanosheets still remains great challenging and the photodetectors based on SnS2 nanosheets suffer from low responsivity, thus hindering their further applications so far. Herein, we provide an improved chemical vapor deposition (CVD) route to synthesize large size SnS2 nanosheets, of which the side length could surpass 150 μm. Then, we fabricated ultrathin SnS2 nanosheets based phototransistorswhich achieved high photoresponsivities up to 261 A/W (with a fast rising time of 20 ms and falling time of 16 ms) in air and 722 A/W in vacuum, respectively. Furthermore, the effects of back-gate voltage and air adsorbates on the optoelectronic properties of the SnS2 nanosheet have been systematically investigated. In addition, we also fabricated a high performance flexible photodetector based on SnS2 nanosheet with a high responsivity of 34.6 A/W.
